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hexfet power mosfet notes through are on page 9 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ??? 20 c/w r ??? 50 max. 18 14.4 144 20 30 -55 to + 150 2.5 0.02 1.6
applications synchronous mosfet for notebook processor power synchronous rectifier mosfet for isolated dc-dc converters in networking systems features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 irf8736pbf-1 tape and reel 4000 irf8736trpbf-1 package type standard pack orderable part number irf8736pbf-1 so-8 base part number v ds 30 v r ds(on) max (@v gs = 10v) 4.8 q g (typical) 17 nc i d (@t a = 25c) 18 a m

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! static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? / . 0.0 / . . ??? 5.5 6.8 v gs(th) gate threshold voltage 1.35 1.8 2.35 v .1 / 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 52 ??? ??? s q g total gate charge ??? 17 26 q gs1 pre-vth gate-to-source charge ??? 4.4 ??? q gs2 post-vth gate-to-source charge ??? 1.9 ??? nc q gd gate-to-drain charge ??? 5.8 ??? q godr gate charge overdrive ??? 4.9 ??? see fig. 16 q sw switch charge (q gs2 + q gd ) ??? 7.7 ??? q oss output charge ??? 7.1 ??? nc r g gate resistance ??? 1.3 2.2 t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 15 ??? t d(off) turn-off delay time ??? 13 ??? ns t f fall time ??? 7.5 ??? c iss input capacitance ??? 2315 ??? c oss output capacitance ??? 449 ??? pf c rss reverse transfer capacitance ??? 219 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 3.1 (body diode) a i sm pulsed source current ??? ??? 144 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 19 29 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions see fig. 14 max. 126 14.4 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 18a mosfet symbol v ds = 10v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 14.4a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v t j = 25c, i f = 14.4a, v dd = 10v di/dt = 300a/ s t j = 25c, i s = 14.4a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 14.4a v gs = 4.5v typ. ??? v ds = v gs , i d = 50 a r g = 1.8 1 1. 0 1 1. 0 1

! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 18a v gs = 10v

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! fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 0 4 8 12 16 20 q g , total gate charge (nc) 0 1 2 3 4 5 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 14.4a

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! fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 4 8 12 16 20 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) ? 1. 0.000 .01 0.0 .1 1.0 1. 0. j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / / a 4 4 r 4 r 4 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a

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! d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.28a 1.75a bottom 14.4a fig 14a. switching time test circuit fig 14b. switching time waveforms %
1 0.1 % % &' % + - % v ds 90% 10% v gs t d(on) t r t d(off) t f

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for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period % )#%
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+ * + - + + + - - - % ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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http://www.irf.com/package/ so-8 package outline dimensions are shown in milimeters (inches) so-8 part marking information p = disgnat es lead - free e xample: t his is an irf7101 (mos fet ) f7101 xxxx international logo rectifier part number lot code product (opt ional) dat e code (yww) y = last digit of the year ww = we e k a = assembly site code e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millime t ers inche s min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. ou t l i ne conf or ms t o j e de c ou t l ine ms - 012aa. notes : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimensions are shown in millimeters [inches]. 5 dime ns ion doe s not incl ude mold prot ru s ions . 6 dime ns ion doe s not incl ude mold prot ru s ions . mold protrus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s u b s t r at e . mold protrus ions not t o exceed 0.15 [.006].

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.21mh, r g = 25 , i as = 14.4a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board ' * ..
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http://www.irf.com/package/ 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel ( dimensions are shown in milimeters (inches) ) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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